IEC 62047-16 Ed. 1.0 b

Semiconductor devices – Micro-electromechanical devices – Part 16: Test methods for determining residual stresses of MEMS films – Wafer curvature and cantilever beam deflection methods

Published by	Publication Date	Number of Pages
IEC	03/05/2015	21

Category: IEC

IEC 62047-16 Ed. 1.0 b – Semiconductor devices – Micro-electromechanical devices – Part 16: Test methods for determining residual stresses of MEMS films – Wafer curvature and cantilever beam deflection methods

IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μ to 10 μ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.