This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MILÛÒPRFÛÒ19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.
Product Details
- Published:
- 10/27/2010
- Number of Pages:
- 24
- File Size:
- 1 file , 730 KB
- Note:
- This product is unavailable in Ukraine, Russia, Belarus
