IEC 63275-2 Ed. 1.0 b

Original price was: $51.00.Current price is: $31.00.

Semiconductor devices – Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors – Part 2: Test method for bipolar degradation due to body diode operation

Published by Publication Date Number of Pages
IEC 05/01/2022 24
PDF FormatPDF FormatMulti-User-AccessMulti-User AccessPrintablePrintableOnline downloadOnline Download
Category:

IEC 63275-2 Ed. 1.0 b – Semiconductor devices – Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors – Part 2: Test method for bipolar degradation due to body diode operation

This part of IEC 63275 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.

Product Details

Edition:
1.0
Published:
05/01/2022
ISBN(s):
9782832201213
Number of Pages:
24
File Size:
1 file , 900 KB
Note:
This product is unavailable in Ukraine, Russia, Belarus