MIL MIL-PRF-19500/159P

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SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDEN (SUPERSEDING MIL-PRF-19500/159N)

Published by Publication Date Number of Pages
MIL 02/04/2009 18
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MIL MIL-PRF-19500/159P – SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDEN (SUPERSEDING MIL-PRF-19500/159N)

MIL MIL-PRF-19500/159N covers the performance requirements for 6.2 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type. Seven levels of radiation hardened (total dose only) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type.

Product Details

Published:
02/04/2009
Number of Pages:
18
File Size:
1 file , 170 KB
Note:
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