This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event characterization, see figure 4), power transistor intended for use in high density power switching applications.
Product Details
- Published:
- 07/15/2011
- Number of Pages:
- 1
- File Size:
- 1 file , 34 KB
- Note:
- This product is unavailable in Ukraine, Russia, Belarus
