MIL MIL-PRF-19500/732B

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Transistor, Field Effect Radiation Hardened, P-Channel, Silicon, Through-Hole and Surface Mount, Types 2N7519 and 2N7520, Quality Levels JANTXV and JANS

Published by Publication Date Number of Pages
MIL 04/23/2010 24
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MIL MIL-PRF-19500/732B – Transistor, Field Effect Radiation Hardened, P-Channel, Silicon, Through-Hole and Surface Mount, Types 2N7519 and 2N7520, Quality Levels JANTXV and JANS

This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications. See 6.7 for JANHC and JANKC die versions. Provisions for radiation hardness assurance (RHA) to two radiation levels (‰ÛÏR‰Û and ‰ÛÏF‰Û) are provided for JANTXV and JANS product assurance levels.

Product Details

Published:
04/23/2010
Number of Pages:
24
File Size:
1 file , 450 KB
Note:
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