MIL MIL-PRF-19500/732E

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SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7519U3, 2N7519U3C, 2N7519T3, 2N7520U3, 2N7520U3C, AND 2N7520T3, JANTXVR, F AND JANSR, F (SUPERSEDING MIL-PRF-19500/732D)

Published by Publication Date Number of Pages
MIL 08/26/2016 26
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MIL MIL-PRF-19500/732E – SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7519U3, 2N7519U3C, 2N7519T3, 2N7520U3, 2N7520U3C, AND 2N7520T3, JANTXVR, F AND JANSR, F (SUPERSEDING MIL-PRF-19500/732D)

MIL MIL-PRF-19500/732E covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.

Product Details

Published:
08/26/2016
Number of Pages:
26
File Size:
1 file , 380 KB
Note:
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