MIL MIL-PRF-19500/733D

MIL MIL-PRF-19500/733D

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Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Device, Encapsulated (Through-Hole, Surface Mount, and Carrier Board Packages), Types 2N7523, and 2N7524, JANTXVR, F and JANSR, F
standard by Military Specifications and Standards, 05/06/2015

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This specification covers the performance requirements for an P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications. See 6.7 for JANHC and JANKC die versions. Provisions for radiation hardness assurance (RHA) to two radiation levels (‰ÛÏR‰Û and ‰ÛÏF‰Û) are provided for JANTXV and JANS product assurance levels.

Product Details

Published:
05/06/2015
Number of Pages:
24
File Size:
1 file , 500 KB
Note:
This product is unavailable in Ukraine, Russia, Belarus

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