This specification covers the detail requirements for silicon, NPN, transistors for use in high-power circuit applications and having the following particular characteristics at TA = + 25 Deg. plus/minus 3 Deg. C.
Product Details
- Published:
- 07/13/2011
- Number of Pages:
- 1
- File Size:
- 1 file , 34 KB
- Note:
- This product is unavailable in Ukraine, Russia, Belarus
