This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened and non-hardened, power transistors. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to four radiation levels (“R”, “F”, “G”, and “H”) are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions.
Product Details
- Published:
- 03/14/2012
- Number of Pages:
- 25
- File Size:
- 1 file , 330 KB
- Note:
- This product is unavailable in Ukraine, Russia, Belarus
